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ESE Undergraduate Labs
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Transistors
-Bipolar Junction Transitors (BJTs)
-Field Effect Transistors (FETs)

BJTs, (Bipolar junction transistors)

Transistor Collector to

Base voltage

in volts

Collector to

Emitter voltage

in volts

Base to

Emitter voltage

in volts

Max Collector

current

in Amps

Max device

dissipation

in Watts

Freq

in MHz

Current Gain Package

Case

Type
2N3906 80 80 5 1 0.6 200 180 Typ TO 92 PNP
2N3904 75 40 6 0.6 0.5 300 200 TO 92 NPN
2N2222 75 40 6 .8 .5 300 200 TO 18 NPN
2N3055 100 60 7 15 115 .8 40 TO 3 NPN

FETs, Field Effect Transistors

Transistor Transconductance

gfs

Typ µmhos

Gate to

source cut-

off voltage

Vgs (off)

max volts

Zero-Gate

voltage drain

current IDDS mA

Min-Max

Gate to Source

breakdown

voltage BVGSS

min V

Input Cap

Ciss Max pf

Transfer

Cap

Crss

Max pf

Device

Dissipation

Pd

Watts

Type
MPF 102 5500 6 5-15 30 4.5 1 360 JFET, N-Channel, VHF Amp/mix NF 4 dB Max at 400 MHz. Pinout Info
2N5457 3000 5 1-5 25 6 3 310 JFET, N channel, Gen Purp Amp/Sw. Pinout Info

Click here for Page 1 and Page 2 of Motorola's Small Signal RF Taransistor data book of commonly used FETs

Packages and Pinouts

TO 92:

 
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University of Pennsylvania - School of Engineering & Applied Science
ESE Undergraduate Labs - 101 Moore Building - 200 South 33rd Street, Philadelphia, PA 19104

This page is maintained and administered by Siddharth M. Deliwala <deliwala_at_ee.upenn.edu>.